Description:

The IRF640 is an N-channel MOSFET designed for high current switching applications. With a drain-source voltage rating of 200V and continuous drain current of 18A, this transistor is perfect for a variety of power control applications. It’s well-suited for use in uninterruptible power supplies (UPS), DC-DC converters for telecom, industrial, and lighting systems, as well as other power electronic circuits that require efficient, high-speed switching.

Features:

• Drain-Source Voltage (V_DS): 200V, ideal for medium voltage applications.

• Gate-Source Voltage (V_GS): ±20V, ensures safe operation of the gate drive.

• Continuous Drain Current (I_D): 18A at Tc = 25°C, providing high current handling capacity.

• Pulsed Drain Current (I_DM): 72A, suitable for dynamic switching applications.

• Total Power Dissipation (P_tot): 125W at Tc = 25°C with a derating factor of 1.0W/°C.

• Operating Junction Temperature (T_j): Max. 150°C, designed for high-temperature applications.

• Storage Temperature (T_stg): -65°C to 150°C for broad environmental compatibility.

Electrical Specifications:

• V_DS (Drain-Source Voltage): 200V

• V_GS (Gate-Source Voltage): ±20V

• I_D (Continuous Drain Current): 18A at Tc = 25°C

• I_DM (Pulsed Drain Current): 72A

• P_tot (Total Power Dissipation): 125W at Tc = 25°C

• Derating Factor: 1.0W/°C

Applications:

• High Current Switching: Suitable for switching high currents in power systems.

• Uninterruptible Power Supply (UPS): Essential for backup power applications.

• DC-DC Converters: Used in telecom, industrial, and lighting equipment for efficient power conversion.

• Power Conversion: Ideal for use in power systems that require medium voltage handling and high current efficiency.

Package Includes:

• 5x IRF640 N-channel MOSFET transistors.

• 1x Heatsink compound (for optimal heat dissipation).

• 5x Heatsinks (for proper cooling of each transistor).

• 5x Screws (for secure mounting).

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