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SKU: R3-F-11-4

2N5551

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₹5.00 (Excluded Tax)
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Description:
The 2N5551 is a high-voltage NPN bipolar junction transistor (BJT) designed for switching and amplification in circuits requiring higher voltage handling. It is commonly used in signal processing, driver stages, and high-voltage applications such as CRT circuits, power supplies, and audio systems.

Specifications:

  • Type: NPN BJT Transistor
  • Collector-Emitter Voltage (Vce): 160V
  • Collector-Base Voltage (Vcb): 180V
  • Emitter-Base Voltage (Veb): 6V
  • Continuous Collector Current (Ic): up to 600mA
  • Power Dissipation: ~625mW
  • Current Gain (hFE): 80 – 250
  • Transition Frequency: ~100 MHz
  • Package: TO-92

Features:

  • High voltage capability (up to 160V)
  • Suitable for switching and amplification
  • Good gain characteristics
  • Compact TO-92 package
  • Reliable and widely used

Applications:

  • High-voltage switching circuits
  • Signal amplification
  • Driver stages
  • Power supply circuits
  • Audio and analog circuits

Pin Configuration (Flat side facing you):

  • Emitter (E)
  • Base (B)
  • Collector (C)

Important Note:

  • Designed for high-voltage, low to medium current applications
  • Use base resistor for safe operation
  • Verify pin configuration before use

Package Includes:

  • 1 × 2N5551 Transistor

Disclaimer:
No warranty. No guarantee. No return. No replacement.

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