FEATURES
High density cell design for low RDS(ON).
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capablity
Maximum rating (Ta = 25°C)
Drain-Source Voltage (VDSS): 60 V
Gate-Source Voltage (VGSS): 20 V
Drain Current Continuous (ID): 500mA
Pulsed (IDP): 2000
Drain Power Dissipation (PD): 625 mW
Junction Temperature (Tj): 150 °C
Storage Temperature Range (Tstg): -55 150 °C
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