Description:
The 2N7000 is a high-performance, N-channel MOSFET designed for general-purpose switching and amplification in low-voltage applications. Featuring a high-density cell design for low RDS(ON) and excellent ruggedness, the 2N7000 is capable of withstanding significant stresses while maintaining reliable operation. With a continuous drain current rating of 500mA, it is suitable for a wide range of low-power switching tasks.
Polarity: N-channel
Low RDS(ON) due to high-density cell design
Voltage-controlled small signal switch
High saturation current capability
Rugged and reliable
Drain-Source Voltage (VDSS): 60 V
Gate-Source Voltage (VGSS): 20 V
Drain Current (ID): 500 mA continuous, 2000 mA pulsed
Drain Power Dissipation (PD): 625 mW
Junction Temperature (TJ): 150°C
Storage Temperature (TSTG): -55°C to +150°C
Package Type: TO-92
General-purpose switching
Low-power amplification
Signal processing
Driver stages in power electronics
Voltage-controlled switches in electronic circuits
5x 2N7000 N-channel MOSFETs
Disclaimer: Product specifications, features, and design may change over time due to product updates or improvements. Images are for illustration purposes only. Brand and color may vary depending on stock availability.
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